STW70 Series

N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package

Catalog

N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STW70N65M2	650 V	446 W	46 mOhm	N-Channel	Through Hole	4 V	117 nC	10 V	TO-247-3	MOSFET (Metal Oxide)	5140 pF	25 V	150 °C	-55 °C	TO-247-3	63 A
STMicroelectronics STW70N60DM6	600 V			N-Channel	Through Hole				TO-247-3	MOSFET (Metal Oxide)		25 V			TO-247-3	62 A

Catalog

N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.