STW75NF20N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-247 package | Discrete Semiconductor Products | 1 | Active | This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters |
STW77N65M5N-channel 650 V, 0.033 Ohm typ, 69 A MDmesh M5 Power MOSFET in TO-247 package | Transistors | 1 | Active | This device is a N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
STW78N65M5Automotive-grade N-channel 650 V, 0.024 Ohm typ., 69 A MDmesh M5 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
STW7N105K5N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW7N90K5N-channel 900 V, 0.72 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package | FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW7N95K3N-channel 950 V, 1.1 Ohm, 7.2 A, TO-247, Zener-protected SuperMESH3; Power MOSFET | FETs, MOSFETs | 1 | Active | The new SuperMESH3 series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a very good dynamic performances coupled with a very large avalanche capability for the most demanding application. |
STW7NK90ZN-channel 900 V, 1.56 Ohm typ., 5.8 A SuperMESH Power MOSFET in a TO-247 package | FETs, MOSFETs | 1 | Active | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. |
| Single | 2 | Obsolete | |
| Integrated Circuits (ICs) | 1 | Obsolete | |
| Clock Generators, PLLs, Frequency Synthesizers | 1 | Active | |
