STP45 Series

Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package

Catalog

Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package

Part	Grade	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Qualification	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Operating Temperature
STMicroelectronics STP45N60DM2AG	Automotive	34 A	56 nC	TO-220	AEC-Q101	25 V	TO-220-3	5 V	MOSFET (Metal Oxide)	150 °C	-55 °C	Through Hole	250 W	N-Channel	600 V	93 mOhm	10 V	2500 pF
STMicroelectronics STP45NF06		38 A		TO-220		20 V	TO-220-3	4 V	MOSFET (Metal Oxide)			Through Hole		N-Channel	60 V	28 mOhm	10 V	980 pF	58 nC	80 W	175 °C

Catalog

Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package

Description

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.