STP30N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET | Single | 3 | Active | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. |
| Transistors | 1 | Obsolete | |
| Discrete Semiconductor Products | 2 | Obsolete | |
STP30N65M5N-channel 650 V, 0.125 Ohm typ., 22 A MDmesh M5 Power MOSFET in TO-220 package | FETs, MOSFETs | 1 | Active | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
STP30NF20N-channel 200 V, 0.065 Ohm, 30 A, TO-220 STripFET(TM) Power MOSFET | Single FETs, MOSFETs | 1 | Active | This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. |
STP310N10F7N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package | FETs, MOSFETs | 1 | Active | This device utilizes the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. |
STP315Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STP31N65M5N-channel 650 V, 0.124 Ohm typ., 22 A MDmesh M5 Power MOSFET in TO-220 package | FETs, MOSFETs | 1 | Active | These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. |
| Single FETs, MOSFETs | 1 | Active | |
STP33N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package | Discrete Semiconductor Products | 2 | Active | These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
