STP310N10F7 Series

N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package

Catalog

N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package

Part	Mounting Type	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Rds On (Max) @ Id, Vgs
STMicroelectronics STP310N10F7	Through Hole	MOSFET (Metal Oxide)	TO-220	10 V	100 V	180 A	180 nC	315 W	3.8 V	TO-220-3	20 V	175 °C	-55 °C	N-Channel	2.7 mOhm

Catalog

N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package

Description

This device utilizes the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.