STP24NM60NN-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220 | Transistors | 1 | Active | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
| Single FETs, MOSFETs | 3 | Obsolete | |
STP25N60M2-EPN-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. |
| Discrete Semiconductor Products | 1 | Active | |
STP26N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 2 | Active | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
| FETs, MOSFETs | 1 | Obsolete | |
| FETs, MOSFETs | 1 | Obsolete | |
STP26N65DM2N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220 package | Single FETs, MOSFETs | 1 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STP26NM60NN-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in TO-220 package | FETs, MOSFETs | 1 | Active | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
| Discrete Semiconductor Products | 2 | Active | |
