STP30 Series

N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET

Catalog

N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Grade
STMicroelectronics STP30N10F7	19 nC	1270 pF	TO-220AB	32 A	MOSFET (Metal Oxide)	TO-220-3	4.5 V	100 V	N-Channel	20 V	Through Hole	10 V	50 W	175 °C	-55 °C	24 mOhm
STMicroelectronics STP30NF10			TO-220	35 A	MOSFET (Metal Oxide)	TO-220-3	4 V	100 V	N-Channel	20 V	Through Hole	10 V	115 W	175 °C	-55 °C	45 mOhm	55 nC
STMicroelectronics STP30N65DM6AG			TO-220	28 A	MOSFET (Metal Oxide)	TO-220-3	4.75 V	650 V	N-Channel	25 V	Through Hole	10 V	223 W	150 °C	-55 °C	115 mOhm	46 nC	2000 pF	AEC-Q101	Automotive

Catalog

N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET

Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.