STP18N60DM2N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 1 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STP18N60M2N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STP18NM60NN-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220 | Transistors | 1 | Active | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STP18NM80N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-220 package | Discrete Semiconductor Products | 1 | Active | These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. |
| Single FETs, MOSFETs | 1 | Active | |
| Transistors | 1 | Active | |
| Single | 2 | Obsolete | |
STP19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package | Discrete Semiconductor Products | 1 | Active | These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. |
STP20N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220 package | Transistors | 6 | Active | The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. |
STP200N3LLN-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package | Transistors | 1 | Active | This device is an N-channel Power MOSFET with very low RDS(on)in all packages. |
