STP18NM80 Series

N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-220 package

Catalog

N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-220 package

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type
STMicroelectronics STP18NM80	2070 pF	30 V	5 V	TO-220	Through Hole	TO-220-3	295 mOhm	70 nC	150 °C	800 V	10 V	MOSFET (Metal Oxide)	190 W	17 A	N-Channel

Catalog

N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-220 package

Description

These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.