| Transistors | 6 | Obsolete | |
STP16N65M5N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in TO-220 package | Transistors | 1 | Active | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
| Single FETs, MOSFETs | 1 | Obsolete | |
STP17NF25N-channel 250 V, 140 mOhm typ., 17 A STripFET II Power MOSFET in a TO-220 package | FETs, MOSFETs | 1 | Active | This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
STP17NK40ZFPN-CHANNEL 400V - 0.23 Ohm - 15A TO-220FP Zener-Protected SuperMESH(TM) Power MOSFET | Single FETs, MOSFETs | 1 | Active | The SuperMESH™series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™products. |
STP18N-channel 650 V, 198 mOhm typ., 15 A MDmesh M5 Power MOSFET in a TO-220 package | Transistors | 3 | Active | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
| Single FETs, MOSFETs | 3 | Obsolete | |
STP180N4F6N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F6 Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
| Single FETs, MOSFETs | 1 | Active | |
STP18N55M5N-channel 550 V, 0.150 Ohm typ., 16 A MDmesh M5 Power MOSFET in DPAK package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
