STP19NF20 Series

N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package

Catalog

N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case
STMicroelectronics STP19NF20	10 V	24 nC	800 pF	160 mOhm	20 V	MOSFET (Metal Oxide)	90 W	4 V	150 °C	-55 °C	Through Hole	15 A	N-Channel	200 V	TO-220	TO-220-3

Catalog

N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package

Description

These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.