STL3NM60N Series

N-channel 600 V, 1.5 Ohm typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package

Catalog

N-channel 600 V, 1.5 Ohm typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type
STMicroelectronics STL3NM60N	188 pF	8-PowerVDFN	PowerFlat™ (3.3x3.3)	4 V	N-Channel	150 °C	-55 °C	10 V	25 V	9.5 nC	2 W 22 W	600 V	1.8 Ohm	650 mA	2.2 A	MOSFET (Metal Oxide)	Surface Mount

Catalog

N-channel 600 V, 1.5 Ohm typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.