STL11N3LLH6N-channel 30 V, 6 mOhm typ., 11 A STripFET H6 Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 package | Transistors | 1 | Active | This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STL11N65M5N-channel 650 V, 0.475 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5 HV package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
STL12N-channel 600 V, 390 mOhm typ., 6.4 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package | Single FETs, MOSFETs | 4 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STL120N10F8N-channel enhancement mode standard level 100 V, 4.6 mOhm max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package | Discrete Semiconductor Products | 1 | Active | This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.
It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. |
STL120N4F6AGAutomotive-grade N-channel 40 V, 2.9 mOhm typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STL120N8F7N-channel 80 V, 4.0 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL125N10F8AGAutomotive N-channel 100 V, 4.6 mOhm max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package | Discrete Semiconductor Products | 1 | Active | The STL125N10F8AG is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. |
STL125N8F7AGAutomotive N-channel 80 V, 3.6 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
| Single | 2 | Obsolete | |
