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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 STMicroelectronics STEVAL-ISA068V1Obsolete | Development Boards Kits Programmers | EVAL BOARD FOR ST1S32 |
 STMicroelectronics 74VCXHQ163245TTRObsolete | Integrated Circuits (ICs) | IC TRANSLATION TXRX 2.7V 48TSSOP |
 STMicroelectronics | Development Boards Kits Programmers | VNQ9050LAJ EVALUATION BOARD |
 STMicroelectronics LSM303DLHCTRObsolete | Sensors Transducers | IMU ACCEL/MAG 3-AXIS I2C 14LGA |
 STMicroelectronics M93C56-WMN6TObsolete | Integrated Circuits (ICs) | EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R |
STMicroelectronics | Integrated Circuits (ICs) | STM32U |
 STMicroelectronics TS831-3IZObsolete | Integrated Circuits (ICs) | IC SUPERVISOR 1 CHANNEL TO92-3 |
 STMicroelectronics STMPE1208SQTRObsolete | Integrated Circuits (ICs) | IC I/O EXPANDER I2C 12B 40QFN |
 STMicroelectronics STM32L1-MAGNETObsolete | Development Boards Kits Programmers | IAR EXPERIMENT STM32 L1 EVAL BRD |
 STMicroelectronics VNB35N07Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHAN 1:1 D2PAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Discrete Semiconductor Products | 1 | Active | ||
STL13N-channel 650 V, 365 mOhm typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package | Single FETs, MOSFETs | 3 | Active | This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
| FETs, MOSFETs | 1 | Active | ||
STL130N6F7N-channel 60 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
| Single FETs, MOSFETs | 1 | Active | ||
STL13N60M6N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package | FETs, MOSFETs | 1 | Active | The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STL13NM60NN-channel 600 V, 0.320 Ohm typ., 10 A MDmesh(TM) II Power MOSFET in PowerFLAT(TM) 8x8 HV package | Transistors | 1 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STL140N-channel 60 V, 0.0024 Ohm typ., 140 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL140N4F7AGAutomotive-grade N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL140N4LLF5N-channel 40 V, 0.00275 Ohm, 32 A, PowerFLAT(TM) 5x6 STripFET(TM) V Power MOSFET | Single FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET is developed using the STripFET™ F5 technology and has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. |