STL11N3LLH6 Series

N-channel 30 V, 6 mOhm typ., 11 A STripFET H6 Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 package

Catalog

N-channel 30 V, 6 mOhm typ., 11 A STripFET H6 Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Technology	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
STMicroelectronics STL11N3LLH6	4.5 V 10 V	17 nC	8-PowerVDFN	11 A	150 °C	-55 °C	PowerFlat™ (3.3x3.3)	2 W 50 W	Surface Mount	MOSFET (Metal Oxide)	N-Channel	20 V	1 V	7.5 mOhm	1690 pF	30 V

Catalog

N-channel 30 V, 6 mOhm typ., 11 A STripFET H6 Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 package

Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.