| Discrete Semiconductor Products | 1 | Obsolete | |
| Transistors | 1 | Obsolete | |
| FET, MOSFET Arrays | 1 | Active | |
STL15N60M2-EPN-channel 600 V, 0.389 Ohm typ., 7 A MDmesh M2 EP Power MOSFET in a PowerFLAT 5x6 HV package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. |
STL15N65M5N-channel 650 V, 0.335 Ohm typ., 10 A MDmesh M5 Power MOSFET in a PowerFLAT 5x6 HV package | Transistors | 1 | Active | This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
STL16N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package | Discrete Semiconductor Products | 2 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STL160N10F8N-Channel Enhancement Mode 100V, 3.2mOhm max, 158A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package | FETs, MOSFETs | 1 | Active | The STL160N10F8 is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. |
STL160N4F7N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | Single FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL16N60M6N-channel 600 V, 0.30 Ohm typ., 8 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package | Discrete Semiconductor Products | 1 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)* area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
