STL120N10F8 Series

N-channel enhancement mode standard level 100 V, 4.6 mOhm max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Manufacturer: STMicroelectronics

Catalog

N-channel enhancement mode standard level 100 V, 4.6 mOhm max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Part	Technology	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type
STMicroelectronics STL120N10F8	MOSFET (Metal Oxide)	8-PowerVDFN	175 °C	-55 °C	PowerFlat™ (5x6)	125 A	100 V	4.6 mOhm	Surface Mount	56 nC	3600 pF	10 V	20 V	4 V	150 W	N-Channel

Catalog

N-channel enhancement mode standard level 100 V, 4.6 mOhm max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package

Description

This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.