| Discrete Semiconductor Products | 1 | Active | |
STH275Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package | Single FETs, MOSFETs | 2 | Active | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
| Single FETs, MOSFETs | 1 | Obsolete | |
STH2N120K5-2AGAutomotive-grade N-channel 1200 V, 7.25 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package | Single FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STH300NH02L-6Automotive-grade N-channel 24 V, 0.95 mOhm typ., 180 A STripFET III Power MOSFET in an H2PAK-6 package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance. |
STH30N65DM6-7AGAutomotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in an H2PAK-7 package | Transistors | 1 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STH310N10F7-2N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package | Transistors | 1 | Active | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STH310N10F7-6N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package | FETs, MOSFETs | 1 | Active | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STH315N10F7-2Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package | FETs, MOSFETs | 1 | Active | These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
| FETs, MOSFETs | 1 | Active | |
