STH310N10F7-2 Series

N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Catalog

N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STH310N10F7-2	180 nC	Surface Mount	100 V	315 W	H2Pak-2	180 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	2.5 mOhm	3.8 V	MOSFET (Metal Oxide)	175 °C	-55 °C	20 V	10 V

Catalog

N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.