STH315N10F7-2 Series

Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Catalog

Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Part	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Qualification	Package / Case	Grade	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)
STMicroelectronics STH315N10F7-2	MOSFET (Metal Oxide)	20 V	180 nC	AEC-Q101	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Automotive	315 W	175 °C	-55 °C	Surface Mount	4.5 V	180 A	10 V	N-Channel	H2Pak-2	100 V

Catalog

Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

Description

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.