STH310N10F7-6 Series

N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

Catalog

N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

Part	Vgs (Max)	Mounting Type	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
STMicroelectronics STH310N10F7-6	20 V	Surface Mount	H2PAK-6	N-Channel	10 V	MOSFET (Metal Oxide)	175 °C	-55 °C	315 W	3.8 V	2.5 mOhm	180 A	D2PAK (6 Leads + Tab) TO-263-7	180 nC	100 V

Catalog

N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.