STH2N120K5-2AG Series

Automotive-grade N-channel 1200 V, 7.25 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Catalog

Automotive-grade N-channel 1200 V, 7.25 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Qualification	Technology	Supplier Device Package	Mounting Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STH2N120K5-2AG	4 V	10 V	60 W	1.5 A	AEC-Q101	MOSFET (Metal Oxide)	H2Pak-2	Surface Mount	30 V	150 °C	-55 °C	Automotive	5.3 nC	10 Ohm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	1.2 kV	124 pF

Catalog

Automotive-grade N-channel 1200 V, 7.25 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.