| Single | 7 | Active | |
STGP30H60DF600 V, 30 A high speed trench gate field-stop IGBT | IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of high frequency converters. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation. |
STGP30H65DFB2Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 package | Single IGBTs | 1 | LTB | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. |
STGP30M65DF2Trench gate field-stop IGBT M series, 650 V 30 A low loss | IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation. |
| Single IGBTs | 2 | Obsolete | |
STGP3HF60HD4.5 A, 600 V very fast IGBT with Ultrafast diode | Transistors | 1 | Active | These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. |
| Transistors | 1 | Active | This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STGP4M65DF2Trench gate field-stop IGBT, M series 650 V, 4 A low loss | Discrete Semiconductor Products | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation. |
STGP5H60DFTrench gate field-stop IGBT, H series 600 V, 5 A high speed | Single IGBTs | 1 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
