7 A, 1200 V very fast IGBT with ultrafast diode
7 A, 1200 V very fast IGBT with ultrafast diode
| Part | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Switching Energy | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Vce(on) (Max) @ Vge, Ic | Package / Case | Td (on/off) @ 25°C | Current - Collector Pulsed (Icm) | Current - Collector (Ic) (Max) [Max] | Gate Charge | Test Condition | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-220 | 1200 V | 75 W | 236 µJ 290 µJ | Through Hole | 150 °C | -55 °C | 2.8 V | TO-220-3 | 15 ns 118 ns | 20 A | 14 A | 24 nC | 3 A 10 Ohm 15 V 800 V | 51 ns |