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STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(7415)

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Part	Category	Description
STMicroelectronics STEVAL-ISA068V1Obsolete	Development Boards Kits Programmers	EVAL BOARD FOR ST1S32
STMicroelectronics 74VCXHQ163245TTRObsolete	Integrated Circuits (ICs)	IC TRANSLATION TXRX 2.7V 48TSSOP
STMicroelectronics EV-VNQ9050LAJ	Development Boards Kits Programmers	VNQ9050LAJ EVALUATION BOARD
STMicroelectronics LSM303DLHCTRObsolete	Sensors Transducers	IMU ACCEL/MAG 3-AXIS I2C 14LGA
STMicroelectronics M93C56-WMN6TObsolete	Integrated Circuits (ICs)	EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R
STMicroelectronics STM32U375CGT6	Integrated Circuits (ICs)	STM32U
STMicroelectronics TS831-3IZObsolete	Integrated Circuits (ICs)	IC SUPERVISOR 1 CHANNEL TO92-3
STMicroelectronics STMPE1208SQTRObsolete	Integrated Circuits (ICs)	IC I/O EXPANDER I2C 12B 40QFN
STMicroelectronics STM32L1-MAGNETObsolete	Development Boards Kits Programmers	IAR EXPERIMENT STM32 L1 EVAL BRD
STMicroelectronics VNB35N07Obsolete	Integrated Circuits (ICs)	IC PWR DRIVER N-CHAN 1:1 D2PAK

Series	Category	# Parts	Status	Description

STGP14	Discrete Semiconductor Products	2	Active
STGP15Trench gate field-stop IGBT, H series 600 V, 15 A high speed	Transistors	3	Active	These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGP18	Transistors	1	Obsolete
STGP1920 A, 600 V fast IGBT with Ultrafast diode	Single	2	Active	This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
STGP19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diode	IGBTs	1	Active	These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
STGP19NC60KD20 A, 600 V short circuit rugged IGBT	Transistors	1	Active	These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
STGP20Trench gate field-stop IGBT M series, 650 V 20 A low loss	Discrete Semiconductor Products	2	Active	This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.
STGP20H60DF600 V, 20 A high speed trench gate field-stop IGBT	Discrete Semiconductor Products	1	Active	This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
STGP20NC60V30 A, 600 V, very fast IGBT	Transistors	1	Active	This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
STGP20V60DFTrench gate field-stop IGBT, V series 600 V, 20 A very high speed	Transistors	1	Active	This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.