STGW15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speed | Transistors | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
| Single | 2 | Obsolete | |
STGW19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diode | IGBTs | 1 | Active | These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. |
STGW201250 V, 20 A IH series trench gate field-stop IGBT | Single | 4 | Active | This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation. |
| Single IGBTs | 1 | Active | This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. |
STGW20V60DFTrench gate field-stop IGBT, V series 600 V, 20 A very high speed | Discrete Semiconductor Products | 1 | LTB | This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGW20V60FTrench gate field-stop IGBT, V series 600 V, 20 A very high speed | Discrete Semiconductor Products | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGW25Trench gate field-stop IGBT, H series 1200 V, 25 A high speed | Single | 4 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
| Single IGBTs | 1 | Active | These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application. |
STGW30Trench gate field-stop IGBT, V series 600 V, 30 A very high speed | IGBTs | 10 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. |
