STGP30M65DF2 Series

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Catalog

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Part	Operating Temperature [Max]	Operating Temperature [Min]	Reverse Recovery Time (trr)	Switching Energy	Package / Case	Power - Max [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Test Condition	IGBT Type	Supplier Device Package	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector (Ic) (Max) [Max]
STMicroelectronics STGP30M65DF2	175 °C	-55 °C	140 ns	300 µJ 960 µJ	TO-220-3	258 W	Through Hole	2 V	10 Ohm 15 V 30 A 400 V	Trench Field Stop	TO-220	80 nC	650 V	120 A	115 ns	31.6 ns	60 A

Catalog

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.