19 A, 600 V, very fast IGBT with Ultrafast diode
19 A, 600 V, very fast IGBT with Ultrafast diode
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge | Switching Energy | Reverse Recovery Time (trr) | Current - Collector (Ic) (Max) [Max] | Package / Case | Supplier Device Package | Vce(on) (Max) @ Vge, Ic | Mounting Type | Current - Collector Pulsed (Icm) | Voltage - Collector Emitter Breakdown (Max) [Max] | Td (on/off) @ 25°C [Max] | Td (on/off) @ 25°C [Min] | Power - Max [Max] | Test Condition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 150 °C | -55 °C | 53 nC | 85 µJ 189 µJ | 31 ns | 40 A | TO-220-3 | TO-220 | 2.5 V | Through Hole | 60 A | 600 V | 97 ns | 25 ns | 130 W | 10 Ohm 12 A 15 V 390 V |