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30 A, 600 V, very fast IGBT
Description
AI
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
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30 A, 600 V, very fast IGBT
30 A, 600 V, very fast IGBT
| Part | Supplier Device Package | Switching Energy | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Package / Case | Current - Collector (Ic) (Max) [Max] | Vce(on) (Max) @ Vge, Ic | Test Condition | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Mounting Type | Gate Charge | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-220 | 220 µJ 330 µJ | 100 A | 31 ns 100 ns | TO-220-3 | 60 A | 2.5 V | 3.3 Ohm 15 V 20 A 390 V | 600 V | 200 W | Through Hole | 100 nC | 150 °C | -55 °C |