STGP20 Series

Trench gate field-stop IGBT M series, 650 V 20 A low loss

Catalog

Trench gate field-stop IGBT M series, 650 V 20 A low loss

Part	IGBT Type	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Test Condition	Gate Charge	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic [Max]	Mounting Type	Switching Energy	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Vce(on) (Max) @ Vge, Ic
STMicroelectronics STGP20M65DF2	Trench Field Stop	26 ns	108 ns	TO-220-3	175 °C	-55 °C	40 A	166 W	12 Ohm 15 V 20 A 400 V	63 nC	80 A	166 ns	2 V	Through Hole	140 µJ 560 µJ	650 V	TO-220
STMicroelectronics STGP20H65DFB2	Trench Field Stop			TO-220-3	175 °C	-55 °C	40 A	147 W	10 Ohm 15 V 20 A 400 V	56 nC	60 A	215 ns		Through Hole	214 µJ 265 µJ	650 V	TO-220	78.8 ns	16 ns	2.1 V

Catalog

Trench gate field-stop IGBT M series, 650 V 20 A low loss

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.