STGB30M65DF2Trench gate field-stop IGBT M series, 650 V 30 A low loss | IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation. |
| Discrete Semiconductor Products | 1 | Active | This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high voltage ultrafast diode. |
| Discrete Semiconductor Products | 1 | Active | |
STGB40H65FBTrench gate field-stop 650 V, 40 A high speed HB series IGBT | Single IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGB4M65DF2Trench gate field-stop IGBT, M series 650 V, 4 A low loss | IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation. |
STGB50H65FB2Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package | Discrete Semiconductor Products | 1 | Active | The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. |
| Transistors | 1 | Active | |
STGB6Trench gate field-stop IGBT M series, 650 V 6 A low loss | Single | 3 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation. |
| Discrete Semiconductor Products | 1 | Active | |
STGB7N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode | IGBTs | 2 | Active | These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. |
