STGB7H60DFTrench gate field-stop IGBT, H series 600 V, 7 A high speed | Single IGBTs | 1 | LTB | This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation. |
| Discrete Semiconductor Products | 1 | Active | This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. |
| Discrete Semiconductor Products | 2 | Active | |
| IGBTs | 1 | Active | |
| Transistors | 1 | Active | These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. |
| Discrete Semiconductor Products | 1 | Active | |
STGD19N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJ | Single IGBTs | 1 | Active | This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. |
STGD20N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 300 mJ | Single IGBTs | 1 | LTB | This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. |
STGD20N45LZAGAutomotive-grade 450 V internally clamped IGBT ESCIS 300 mJ | Single IGBTs | 1 | Active | This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required. |
STGD25N36LZAGAutomotive-grade 360 V internally clamped IGBT ESCIS 300 mJ | Single IGBTs | 1 | Active | This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required. |
