STGAP2SICSANGalvanically isolated 4 A single gate driver for SiC MOSFETs | Isolators - Gate Drivers | 2 | Active | The STGAP2SICSAN is a single gate driver which provides isolation between the gate driving channel and the low voltage control and interface circuitry.
The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. The device has a single output pin and Miller CLAMP function that prevents gate spikes during fast commutations in half-bridge topologies. This configuration provides high flexibility and bill of material reduction for external components.
The device integrates protection functions: UVLO with optimized value for SiC MOSFETs and thermal shut down are included to facilitate the design of highly reliable systems. Dual input pins allow the selection of signal polarity control and implementation of HW interlocking protection to avoid cross-conduction in case of controller malfunction. The input to output propagation delay is less than 45 ns, which delivers high PWM control accuracy. A standby mode is available to reduce idle power consumption. |
STGAP2SICSNGalvanically isolated 4 A single gate driver for SiC MOSFETs | Evaluation Boards | 3 | Active | The STGAP2SICSN is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and interface circuitry.
The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. The device is available in two different configurations. The configuration with separated output pins allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The configuration featuring single output pin and Miller CLAMP function prevents gate spikes during fast commutations in half-bridge topologies. Both configurations provide high flexibility and bill of material reduction for external components.
The device integrates protection functions: UVLO with optimized value for SiC MOSFETs and thermal shutdown are included to easily design high reliability systems. Dual input pins allow choosing the control signal polarity and also implementing HW interlocking protection in order to avoid cross-conduction in case of controller malfunction. The input to output propagation delay results are contained within 75 ns, providing high PWM control accuracy. A standby mode is available in order to reduce idle power consumption. |
| Isolators - Gate Drivers | 2 | Active | |
STGB10Trench gate field-stop IGBT, H series 600 V, 10 A high speed | Single | 4 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
| Discrete Semiconductor Products | 1 | Active | These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. |
| Discrete Semiconductor Products | 1 | Obsolete | |
| Transistors | 1 | Active | These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. |
STGB15Trench gate field-stop IGBT, H series 600 V, 15 A high speed | Single IGBTs | 2 | Active | These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation. |
STGB18Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ | IGBTs | 1 | Active | This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. The device show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required. |
| Transistors | 1 | Obsolete | |
