STGB50H65FB2 Series
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package
Manufacturer: STMicroelectronics
Catalog
Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package
| Part | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge | Mounting Type | Supplier Device Package | Package / Case | Vce(on) (Max) @ Vge, Ic | Current - Collector Pulsed (Icm) | IGBT Type | Current - Collector (Ic) (Max) [Max] | Switching Energy | Test Condition | Td (on/off) @ 25°C [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 272 W | 650 V | 175 °C | -55 °C | 151 nC | Surface Mount | TO-263 (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 2 V | 150 A | Trench Field Stop | 86 A | 580 µJ 910 µJ | 4.7 Ohm 15 V 50 A 400 V | 28 ns 115 ns |
Description
AI
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.