STMicroelectronics

The circuit is a high-speed CMOS low voltage quad analog SPDT (single pole dual throw) switch or 2:1 multiplexer/demultiplexer switch developed with silicon gate CMOS technology. It is designed to operate from 1.65 V to 5.5 V, making this device ideal for portable applications. The nSEL inputs are provided to control the switch. The switch S1 is ON (connected to common port Dn) when the nSEL input is held high, and OFF (a high impedance state exists between the two ports) when SEL is held low. The switch S2 is ON (connected to common port D) when the nSEL input is held low, and OFF (a high impedance state exists between the two ports) when nSEL is held high. Additional key features include: fast switching speed, break-before-make delay time, and ultra-low power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity.

The STG5682 is a high-speed CMOS low voltage dual analog S.P.D.T. (Single Pole Dual Throw) SWITCH or 2:1 Multiplexer /Demultiplexer Switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.5V, making this device ideal for portable applications. Additional key features are fast switching speed, Break Before Make Delay Time and Ultra Low Power Consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.

The STG719 is an high-speed S.P.D.T. (Single Pole Double Throw) SWITCH fabricated in silicon gate C2MOS technology. It designed to operate from 1.8V to 5.5V, making this device ideal for portable applications, audio signal routing, video switching, mobile and communication systems. It offers 4Ω ON-Resistance Max at 5V 25˚C and very low ON-Resistance Flatness. Additional key features are fast switching speed (tON=7ns, tOFF=4.5ns), Break Before Make Delay Time and Low Power Consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. It’s available in the commercial and extended temperature range.

The STGAP1BS is a galvanically isolated single gate driver for N-channel MOSFETs and IGBTs with advanced protection, configuration and diagnostic features. The architecture of the STGAP1BS isolates the channel from the control and the low voltage interface circuitry through true galvanic isolation. The gate driver is characterized by 5 A capability, making the device also suitable for high power inverter applications such as motor drivers in hybrid and electric vehicles and in industrial drives. The output driver section provides a rail-to-rail output with the possibility to use a negative gate driver supply. The input to output propagation delay remains below 100 ns, providing high PWM control accuracy. Protection functions such as the Miller clamp, desaturation detection, dedicated sense pin for overcurrent detection, output 2-level turn-off, VCEovervoltage protection, UVLO and OVLO are included to easily design high reliability systems. Open drain diagnostic outputs are included and detailed device conditions can be monitored through the SPI. Each function parameter can be programmed via the SPI, making the device very flexible and allowing it to fit in a wide range of applications. Separate sink and source outputs provide high flexibility and bill of material reduction for external components.