STGB15 Series
Trench gate field-stop IGBT, H series 600 V, 15 A high speed
Manufacturer: STMicroelectronics
Catalog
Trench gate field-stop IGBT, H series 600 V, 15 A high speed
| Part | Supplier Device Package | Gate Charge | Mounting Type | Current - Collector (Ic) (Max) [Max] | Reverse Recovery Time (trr) | Operating Temperature [Max] | Operating Temperature [Min] | Vce(on) (Max) @ Vge, Ic [Max] | Package / Case | IGBT Type | Switching Energy | Voltage - Collector Emitter Breakdown (Max) [Max] | Td (on/off) @ 25°C | Power - Max [Max] | Test Condition | Current - Collector Pulsed (Icm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-263 (D2PAK) | 45 nC | Surface Mount | 30 A | 142 ns | 175 °C | -55 °C | 2 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Trench Field Stop | 90 µJ 450 µJ | 650 V | 24 ns 93 ns | 136 W | 12 Ohm 15 A 15 V 400 V | 60 A |
STMicroelectronics | TO-263 (D2PAK) | 81 nC | Surface Mount | 30 A | 103 ns | 175 °C | -55 °C | 2 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Trench Field Stop | 136 µJ 207 µJ | 600 V | 24.5 ns 118 ns | 115 W | 10 Ohm 15 V 15 A 400 V | 60 A |
Description
AI
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.