STFW40N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package | Discrete Semiconductor Products | 1 | Active | These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics,rendering them suitable for the most demanding high efficiency converters. |
| Single FETs, MOSFETs | 1 | Obsolete | |
STFW4N150N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-3PF | Transistors | 1 | Active | Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on)per area, unrivalled gate charge and switching characteristics. |
| Transistors | 1 | Active | |
STG1218Dual supply, quad SPDT switch, 1.8V and 3.3V logic input compatible | Analog Switches, Multiplexers, Demultiplexers | 1 | Active | The STG1218 is a quad channel analog switch (SPDT), which is able to accommodate with positive and negative voltages. Each channel has an independent selection pin, and a common inhibit pin. Thanks to its large operating voltage range and low Ron, this switch can fit many applications such as RRU (both LDMOS and GaN solutions). It is also a good operational amplifier companion chip used with a standard 3.3 V single supply operation for gain selection. In addition, it has the versatility to be compatible with 3.3 V and 1.8 V logic standard thresholds. |
STG200G65FD8AGAutomotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing | Single IGBTs | 1 | Active | This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. |
STG3157Low voltage low on-resistance SPDT switch with break-before-make feature | Interface | 1 | Active | The STG3157 is a high-speed CMOS analog SPDT (single-pole double-throw) switch or 2:1 multiplexer/demultiplexer bus switch manufactured using silicon gate CMOS technology. It is designed to operate from a 1.65 V to 5.5 V supply, making the device ideal for portable applications.
The STG3157 features very low on-resistance (< 9 Ω) at VCC= 3.0 V. The IN input is provided to control the SPDT switch, and is compatible with standard CMOS output. Switch S1 is ON (connected to common port D) when the IN input is held high, and OFF (a high impedance state exists between the two ports) when IN is held low.
Switch S2 is ON (connected to common port D) when the IN input is held low and OFF (a high impedance state exists between the two ports) when IN is held high.
Additional key features are fast switching speed, break-before-make delay time, and very low power consumption. All inputs and outputs are equipped with protection circuits to protect against static discharge, giving them immunity from ESD and transient excess voltage. |
| Integrated Circuits (ICs) | 1 | Obsolete | |
| Integrated Circuits (ICs) | 1 | Obsolete | |
| Interface | 1 | Obsolete | |
