STD4LN80K5N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a DPAK package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for application requiring superior power density and high efficiency. |
| Single FETs, MOSFETs | 4 | Active | |
STD4N62K3N-channel 620 V, 1.7 Ohm typ., 3.8 A, MDmesh K3 Power MOSFET in a DPAK package | Transistors | 1 | Active | This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. |
STD4N80K5N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in DPAK package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STD4N90K5N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a DPAK package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STD4NK100ZAutomotive-grade N-channel 1000 V, 5.4 Ohm typ., 2.2 A SuperMESH Power MOSFET in a DPAK package | Single FETs, MOSFETs | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
| FETs, MOSFETs | 1 | NRND | |
| Transistors | 1 | Active | |
STD4NK80Z-1N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package | Transistors | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
| Single | 3 | Obsolete | |
