STD4LN80K5 Series
N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a DPAK package
Manufacturer: STMicroelectronics
Catalog
N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a DPAK package
| Part | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) | Technology | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | Surface Mount | 150 °C | -55 °C | DPAK | 122 pF | 800 V | N-Channel | 60 W | MOSFET (Metal Oxide) | 30 V | 2.6 Ohm | 10 V | 3.7 nC | 5 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 3 A |
Description
AI
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for application requiring superior power density and high efficiency.