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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 STMicroelectronics STEVAL-ISA068V1Obsolete | Development Boards Kits Programmers | EVAL BOARD FOR ST1S32 |
 STMicroelectronics 74VCXHQ163245TTRObsolete | Integrated Circuits (ICs) | IC TRANSLATION TXRX 2.7V 48TSSOP |
 STMicroelectronics | Development Boards Kits Programmers | VNQ9050LAJ EVALUATION BOARD |
 STMicroelectronics LSM303DLHCTRObsolete | Sensors Transducers | IMU ACCEL/MAG 3-AXIS I2C 14LGA |
 STMicroelectronics M93C56-WMN6TObsolete | Integrated Circuits (ICs) | EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R |
STMicroelectronics | Integrated Circuits (ICs) | STM32U |
 STMicroelectronics TS831-3IZObsolete | Integrated Circuits (ICs) | IC SUPERVISOR 1 CHANNEL TO92-3 |
 STMicroelectronics STMPE1208SQTRObsolete | Integrated Circuits (ICs) | IC I/O EXPANDER I2C 12B 40QFN |
 STMicroelectronics STM32L1-MAGNETObsolete | Development Boards Kits Programmers | IAR EXPERIMENT STM32 L1 EVAL BRD |
 STMicroelectronics VNB35N07Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHAN 1:1 D2PAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STD3NK80ZT4N-channel 800 V, 3.6 Ohm typ., 2.5 A SuperMESH Power MOSFET in a DPAK package | FETs, MOSFETs | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STD3NK90ZT4N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in DPAK package | Transistors | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STD4N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in DPAK package | Transistors | 1 | Active | These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. |
STD40Automotive-grade P-channel -80 V, 18.5 mOhm typ., -40 A STripFET F6 Power MOSFET in a DPAK package | Single | 4 | Active | This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
STD44N4LF6N-channel 40 V, 8.9 mOhm, 44 A , DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET | FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. |
STD45N-channel 100 V, 14.5mOhm typ., 45 A, STripFET F7 Power MOSFETs in DPAK, I2PAK and TO-220 packages | Single FETs, MOSFETs | 1 | Active | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STD45P4LLF6AGAutomotive-grade P-channel -40 V, 12 mOhm typ., -50 A STripFET F6 Power MOSFET in a DPAK package | Single FETs, MOSFETs | 1 | Active | This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
| FETs, MOSFETs | 1 | Obsolete | ||
STD46P4LLF6P-channel 40 V, 0.0125 Ohm typ., 46 A STripFET F6 Power MOSFET in a DPAK package | Discrete Semiconductor Products | 1 | Active | This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. |
STD47N10F7AGAutomotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STripFET F7 Power MOSFET in DPAK package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |