STD5N95N-channel 950 V, 3 Ohm typ., 4 A MDmesh K3 Power MOSFET in a DPAK package | Transistors | 1 | Active | This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. |
STD5N95K5N-channel 950 V, 2 Ohm typ., 3.5 A MDmesh K5 Power MOSFET in a DPAK package | Single FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STD5NK40N-channel 400 V, 1.45 Ohm typ., 3 A SuperMESH Power MOSFET in IPAK package | Single FETs, MOSFETs | 2 | Active | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
| Single FETs, MOSFETs | 1 | Active | |
| Transistors | 1 | NRND | |
| Discrete Semiconductor Products | 2 | Active | |
| Discrete Semiconductor Products | 2 | Active | |
| Single FETs, MOSFETs | 1 | Active | |
STD60N-channel 60 V, 0.014 Ohm typ., 60 A STripFET II Power MOSFET in a DPAK package | Transistors | 2 | Active | This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
STD60NF55LN-channel 55 V, 0.012 Ohm, 60 A DPAK STripFET(TM) II Power MOSFET | Discrete Semiconductor Products | 1 | Active | This MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. |
