SCT4045DEHR Series
750V, 34A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
Manufacturer: Rohm Semiconductor
Catalog
750V, 34A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
| Part | Gate Charge (Qg) (Max) @ Vgs | Grade | FET Type | Vgs (Max) [Min] | Vgs (Max) [Max] | Power Dissipation (Max) [Max] | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 63 nC | Automotive | N-Channel | -4 V | 21 V | 115 W | Through Hole | 59 mOhm | TO-247N | 4.8 V | 175 °C | 34 A | 18 V | 750 V | AEC-Q101 | 1460 pF | TO-247-3 |
Key Features
• Qualified to AEC-Q101, Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant
Description
AI
AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.