SCT4045DW7 Series

750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Vgs (Max) [Min]	Operating Temperature	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
Rohm Semiconductor SCT4045DW7TL	750 V	TO-263-7L	18 V	N-Channel	31 A	1460 pF	59 mOhm	4.8 V	21 V	-4 V	175 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	93 W	63 nC	Surface Mount

Catalog

750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Description

SCT4045DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.