ON Semiconductor

Automotive Power MOSFET designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Automotive Power MOSFET, 30V, 2.1A, 100 mΩ, Single N-Channel, SOT-23.These miniature surface mount MOSFETs low RDS(on)assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.

Automotive Power MOSFET ideal for low power applications. 20V 300mA 1 OhmThese miniature surface mount MOSFETs low RDS(on)assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry.

Automotive Power MOSFET.These miniature surface mount MOSFETs low RDS(on)assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

This is a complete series of 3.0 Watt Zener Diode Voltage Regulators with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial-lead, transfer molded plastic package that offers protection in all common environmental conditions.

The ON Semiconductor serial SRAM family includes severalintegrated memory devices including this 1Mb serially accessed StaticRandom Access Memory, internally organized as 128 K words by8 bi t s . The devices are designed and fabricated usingON Semiconductor’s advanced CMOS technology to provide bothhigh-speed performance and low power. The devices operate with asingle chip select (CS) input and use a simple Serial PeripheralInterface (SPI) protocol. In SPI mode, a single data-in (SI) anddata-out (SO) line is used along with the clock (SCK) to access datawithin the device. In DUAL mode, two multiplexed data-in/data-out(SIO0-SIO1) lines are used and in QUAD mode, four multiplexeddata-in/data-out (SIO0-SIO3) lines are used with the clock to accessthe memory.The devices can operate over a wide temperature range of −40°C to+85°C and are available in a 8-lead TSSOP package.

The ON Semiconductor serial SRAM family includes severalintegrated memory devices including this 1 Mb serially accessedStatic Random Access Memory, internally organized as 128 K wordsby 8 bits. The devices are designed and fabricated usingON Semiconductor’s advanced CMOS technology to provide bothhigh-speed performance and low power. The devices operate with asingle chip select (CS) input and use a simple Serial PeripheralInterface (SPI) protocol. In SPI mode, a single data-in (SI) anddata-out (SO) line is used along with the clock (SCK) to access datawithin the device. In DUAL mode, two multiplexed data-in/data-out(SIO0-SIO1) lines are used and in QUAD mode, four multiplexeddata-in/data-out (SIO0-SIO3) lines are used with the clock to accessthe memory. The devices can operate over a wide temperature range of−40°C to +85°C and are available in a 8-lead TSSOP package. TheN01S830xA device has two different variations, a HOLD version thatallows communication to the device to be paused and a batteryback-up (BBU) version to be used with a battery to retain data whenpower is lost.