N01S830 Series

Serial SRAM Memory, 1 Mb, Ultra-Low-Power, 2.5 to 5.5 V

Catalog

Serial SRAM Memory, 1 Mb, Ultra-Low-Power, 2.5 to 5.5 V

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Interface	Memory Organization	Supplier Device Package	Technology	Clock Frequency	Memory Type	Package / Case	Package / Case [custom]	Package / Case [custom]	Memory Format	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size
ON Semiconductor N01S830BAT22IT	2.5 V	5.5 V	SPI	128K x 8	8-TSSOP	SRAM	20 MHz	Volatile	8-TSSOP	0.173 "	4.4 mm	SRAM	Surface Mount	85 °C	-40 °C	1 Mbit
ON Semiconductor N01S830HAT22I	2.5 V	5.5 V	SPI	128K x 8	8-TSSOP	SRAM	20 MHz	Volatile	8-TSSOP	0.173 "	4.4 mm	SRAM	Surface Mount	85 °C	-40 °C	1 Mbit

Catalog

Serial SRAM Memory, 1 Mb, Ultra-Low-Power, 2.5 to 5.5 V

Key Features

• Power Supply Range:2.5 to 5.5 V

• Very Low Typical Standby Current:< 4 µA

• Very Low Operating Current:< 10 mA

• Simple Serial Interface- Single-bit SPI Access - DUAL-bit and QUAD-bit SPI-like Access

• Flexible Operating Modes- Word Mode- Page Mode - Burst Mode (Full Array)

• High Frequency Read and Write Operation- Clock Frequency 20 MHz

• Functional Options- HOLD Pin for Pausing Operation- VBAT Pin for Battery−Back up

• Built-in Write Protection (CS High)

• High Reliability- Unlimited Write Cycles

Description

The ON Semiconductor serial SRAM family includes severalintegrated memory devices including this 1 Mb serially accessedStatic Random Access Memory, internally organized as 128 K wordsby 8 bits. The devices are designed and fabricated usingON Semiconductor’s advanced CMOS technology to provide bothhigh-speed performance and low power. The devices operate with asingle chip select (CS) input and use a simple Serial PeripheralInterface (SPI) protocol. In SPI mode, a single data-in (SI) anddata-out (SO) line is used along with the clock (SCK) to access datawithin the device. In DUAL mode, two multiplexed data-in/data-out(SIO0-SIO1) lines are used and in QUAD mode, four multiplexeddata-in/data-out (SIO0-SIO3) lines are used with the clock to accessthe memory. The devices can operate over a wide temperature range of−40°C to +85°C and are available in a 8-lead TSSOP package. TheN01S830xA device has two different variations, a HOLD version thatallows communication to the device to be paused and a batteryback-up (BBU) version to be used with a battery to retain data whenpower is lost.