MVB50P03HDL Series

Single P-Channel Logic Level Power MOSFET -30V, -50A, 25mΩ

Catalog

Single P-Channel Logic Level Power MOSFET -30V, -50A, 25mΩ

Part	Power Dissipation (Max)	Mounting Type	Qualification	FET Type	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Grade	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor MVB50P03HDLT4G	125 W	Surface Mount	AEC-Q101	P-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	15 V	2 V	Automotive	100 nC	-55 °C	150 °C	50 A	MOSFET (Metal Oxide)	25 mOhm	30 V	4900 pF	D2PAK	5 V

Catalog

Single P-Channel Logic Level Power MOSFET -30V, -50A, 25mΩ

Key Features

• Avalanche Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSSand VDS(on)Specified at Elevated Temperature

• Short Heatsink Tab Manufactured Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.