N01S818HA Series
Serial SRAM Memory, Ultra-Low-Power, 1 Mb, 1.7 - 2.2 V
Manufacturer: ON Semiconductor
Catalog
Serial SRAM Memory, Ultra-Low-Power, 1 Mb, 1.7 - 2.2 V
Key Features
• Power Supply Range:1.7 to 2.2 V
• Very Low Typical Standby Current:<1 µA
• Very Low Operating Current< 10 mA
• Simple Serial Interface:- Single-bit SPI Access- DUAL-bit and QUAD-bit SPI-like Access
• Flexible Operating Modes- Word Mode - Page Mode- Burst Mode (Full Array)
• High Frequency Read and Write Operation- Clock Frequency 20 MHz
• Built-in Write Protection (CS High)
• High Reliability- Unlimited Write Cycles
• These Devices are Pb−Free and are RoHS Compliant- Green TSSOP
Description
AI
The ON Semiconductor serial SRAM family includes severalintegrated memory devices including this 1Mb serially accessed StaticRandom Access Memory, internally organized as 128 K words by8 bi t s . The devices are designed and fabricated usingON Semiconductor’s advanced CMOS technology to provide bothhigh-speed performance and low power. The devices operate with asingle chip select (CS) input and use a simple Serial PeripheralInterface (SPI) protocol. In SPI mode, a single data-in (SI) anddata-out (SO) line is used along with the clock (SCK) to access datawithin the device. In DUAL mode, two multiplexed data-in/data-out(SIO0-SIO1) lines are used and in QUAD mode, four multiplexeddata-in/data-out (SIO0-SIO3) lines are used with the clock to accessthe memory.The devices can operate over a wide temperature range of −40°C to+85°C and are available in a 8-lead TSSOP package.
