O
ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
FMB200PNP Multi-Chip General Purpose Amplifier | Transistors | 1 | Obsolete | This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. |
FMB2222ANPN Multi-Chip General Purpose Amplifier | Discrete Semiconductor Products | 1 | Active | This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. |
FMB3906Dual NPN 40 V, 200 mA General Purpose Bipolar Junction Transistor | Bipolar Transistor Arrays | 2 | Active | Dual NPN 40 V, 200 mA General Purpose Bipolar Junction Transistor. This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. |
FMBA06NPN Multi-Chip General Purpose Amplifier | Bipolar (BJT) | 1 | Active | This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. |
FMBA14NPN Multi-Chip Darlington Transistor | Bipolar Transistor Arrays | 2 | Active | This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. |
FMBA56PNP Multi-Chip General Purpose Amplifier | Transistors | 1 | Obsolete | This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. |
FMBM5401NPN General Purpose Amplifier | Single Bipolar Transistors | 3 | Active | NPN General Purpose Amplifier |
FMBS2383NPN Epitaxial Silicon Transistor | Single Bipolar Transistors | 1 | Obsolete | NPN Epitaxial Silicon Transistor |
| Bipolar (BJT) | 2 | Obsolete | ||
| Discrete Semiconductor Products | 1 | Obsolete | ||