FMBA14 Series

NPN Multi-Chip Darlington Transistor

Catalog

NPN Multi-Chip Darlington Transistor

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]
ON Semiconductor FMBA14	2 NPN (Dual)	20000	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	1.2 A	700 mW	1.5 V	Surface Mount	1.25 MHz	100 nA	-55 °C	150 °C	30 V
ON Semiconductor FMBA14	2 NPN (Dual)	20000	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	1.2 A	700 mW	1.5 V	Surface Mount	1.25 MHz	100 nA	-55 °C	150 °C	30 V

NPN Multi-Chip Darlington Transistor

This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.