Catalog
NPN Multi-Chip General Purpose Amplifier
Description
AI
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
Beta
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NPN Multi-Chip General Purpose Amplifier
NPN Multi-Chip General Purpose Amplifier
| Part | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Package / Case | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Transistor Type | Frequency - Transition | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 250 mV | 100 hFE | SuperSOT™-6 | SOT-23-6 Thin TSOT-23-6 | Surface Mount | -55 °C | 150 °C | 2 NPN (Dual) | 100 MHz | 500 mA | 100 nA | 80 V | 700 mW |